Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications

Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves resonances, is observed. At room temperature, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector. We present the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging.Comment: 22 pages, 12 figures, review pape

Optically Driven Domain Instability and High-Frequency Current Oscillations in Photoexcited GaAs under Nonuniform Electron Heating

Fast domain instabilities induced by light-interference pattern in dc-biased semi-insulating GaAs are investigated. Current oscillations in GHz-frequency range are observed due to nonuniform electron heating and domains formation in light-induced grating. Characteristic features of the oscillations under various experimental conditions are presented. Numerical calculations based on the hot-electron hydrodynamic model are used to explain the observed nonlinear features under various external bias and periods of the grating

Infrared Reflectance Kramers-Kronig Analysis by Anchor-Window Technique

An algorithm for the Kramers-Kronig analysis of the reflectivity spectra, based on an anchor-window technique is presented. The high-frequency asymptote, required for the Kramers-Kronig analysis, is determined by minimizing differences between the Kramers-Kronig-deduced optical constants of a system under investigation and known optical constants measured in a small anchor-window. The algorithm is illustrated by applying it for a reconstruction of the optical conductivity σ(ω) of the fci-ZnMgRE quasicrystals in the spectral range of 0.01-6.5 eV from the experimental IR Fourier-transform reflectivity data and the experimental spectral ellipsometry VIS-UV data. The reliability of the suggested Kramers-Kronig analysis technique is confirmed by independent infrared spectral ellipsometry σ(ω) measurements for fci-ZnMgRE

High-Speed Quadratic Electrooptic Nonlinearity in dc-Biased InP

We present experimental data on degenerate four-wave mixing as well as simulation results of fast optical nonlinearities in highly-excited semiinsulating InP under applied dc-field. Hot-electron transport governed enhancement of optical nonlinearity is obtained by applying a dc-field of 10-14 kV/cm at full-modulation depth of a light-interference pattern. The hydrodynamic model, which incorporates both free-carrier and photorefractive nonlinearities is used to explain the experimentally observed features. We show that the enhancement of optical nonlinearity is due to the quadratic electrooptic effect

High-Speed Quadratic Electrooptic Nonlinearity in dc-Biased InP

We present experimental data on degenerate four-wave mixing as well as simulation results of fast optical nonlinearities in highly-excited semi-insulating InP under applied dc-field. Hot-electron transport governed enhancement of optical nonlinearity is obtained by applying a dc-field of 10-14 kV/cm at full-modulation depth of a light-interference pattern. The hydrodynamic model, which incorporates both free-carrier and photorefractive nonlinearities is used to explain the experimentally observed features. We show that the enhancement of optical nonlinearity is due to the quadratic electrooptic effect